Indian patent granted to Dr Nikhil K S, Vinaya S J & Dr Rathnamala Rao

Dr. Nikhil K. S., Vinaya S. J. and Dr. Rathnamala Rao in the Department of Electronics and Communication Engineering, NITK Surathkal, have been granted an Indian Patent titled: “Fabrication of Gallium Nitride Junction Less FinFET with Symmetrically and Longitudinally Inserted Low-k Dielectric Oxide”.